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IXTP 10N60PM
Symbol
Test Conditions
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
ISOLATED TO-220 (IXTP...M)
Min. Typ. Max.
g fs
C iss
C oss
V DS = 10 V; I D = 5 A, pulse test
V GS = 0 V, V DS = 25 V, f = 1 MHz
6
11
1610
165
S
pF
pF
C rss
14
pF
1
2
3
t d(on)
20
ns
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
V GS = 10 V, V DS = 0.5 V DSS , I D = 10 A
R G = 10 Ω (External)
V GS = 10 V, V DS = 0.5 V DSS , I D = 5 A
24
55
18
32
11
10
ns
ns
ns
nC
nC
nC
Terminals: 1 - Gate
R thJS
2.5
° C/W
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Characteristic Values
(T J = 25 ° C, unless otherwise specified)
Symbol
Test Conditions
Min. Typ. Max.
I S
I SM
V SD
t rr
V GS = 0 V
Repetitive
I F = I S , V GS = 0 V,
Pulse test, t ≤ 300 μ s, duty cycle d ≤ 2 %
I F = 9 A, -di/dt = 100 A/ μ s
500
10
30
1.5
A
A
V
ns
V R = 100V
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications offered are
derived from data gathered during objective characterizations of preliminary engineering lots; but
also may yet contain some information supplied during a pre-production design evaluation. IXYS
reserves the right to change limits, test conditions, and dimensions without notice.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344
6,727,585
one or moreof the following U.S. patents:
4,850,072
4,881,106
5,017,508
5,034,796
5,063,307
5,187,117
5,381,025
5,486,715
6,259,123 B1
6,306,728 B1
6,534,343
6,583,505
6,710,405B2
6,710,463
6,759,692
6,771,478 B2
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